IRLR3636PBF Infineon Technologies
Артикул
IRLR3636PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 60V 50A DPAK, N-Channel 60 V 50A (Tc) 143W (Tc) Surface Mount D-Pak
Цена
336 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLR3636PBF.jpg
Supplier Device Package
D-Pak
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
3779 pF @ 50 V
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001553190,2156-IRLR3636PBFINF,INFINFIRLR3636PBF
Standard Package
3,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
143W (Tc)
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