ISC015N04NM5ATMA1 Infineon Technologies
Артикул
ISC015N04NM5ATMA1
Бренд
Infineon Technologies
Описание
40V 1.5M OPTIMOS MOSFET SUPERSO8, N-Channel 40 V 33A (Ta), 206A (Tc) 3W (Ta), 115W (Tc) Surface Mount PG-TDSON-8 FL
Цена
351 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/ISC015N04NM5ATMA1.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3W (Ta), 115W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
33A (Ta), 206A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4800 pF @ 20 V
Supplier Device Package
PG-TDSON-8 FL
Package / Case
8-PowerTDFN
Series
OptiMOS™-5
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-ISC015N04NM5ATMA1DKR,SP005352240,448-ISC015N04NM5ATMA1CT,448-ISC015N04NM5ATMA1TR
Standard Package
5,000
Operating Temperature
-55°C ~ 175°C (TJ)
FET Feature
-
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