SPB10N10L G Infineon Technologies
Артикул
SPB10N10L G
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 10.3A TO263-3, N-Channel 100 V 10.3A (Tc) 50W (Tc) Surface Mount PG-TO263-3-2
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPB10N10L-G.jpg
Supplier Device Package
PG-TO263-3-2
REACH Status
REACH Affected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
154mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id
2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
444 pF @ 25 V
FET Feature
-
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
SIPMOS®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
10.3A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPB10N10LGINCT,SPB10N10LG,SPB10N10LGINTR,SPB10N10LGINDKR,SPB10N10L G-ND,SPB10N10LGXT,SP000102169
Standard Package
1,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
50W (Tc)
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