SPP80N06S209 Infineon Technologies
Артикул
SPP80N06S209
Бренд
Infineon Technologies
Описание
N-CHANNEL POWER MOSFET, N-Channel 55 V 80A (Tc) 190W (Tc) Through Hole PG-TO220-3-1
Цена
119 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPP80N06S209.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3140 pF @ 25 V
FET Feature
-
Supplier Device Package
PG-TO220-3-1
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Series
OptiMOS™
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
RoHS Status
Not applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-SPP80N06S209,INFINFSPP80N06S209
Standard Package
1
Power Dissipation (Max)
190W (Tc)
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