IPD220N06L3GBTMA1 Infineon Technologies
Артикул
IPD220N06L3GBTMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 60V 30A TO252-3, N-Channel 60 V 30A (Tc) 36W (Tc) Surface Mount PG-TO252-3
Цена
165 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD220N06L3GBTMA1.jpg
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
22mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 30 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD220N06L3 G-ND,IPD220N06L3GBTMA1DKR,IPD220N06L3 G,SP000453644,IPD220N06L3GBTMA1TR,IPD220N06L3GBTMA1CT
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IPD220
Power Dissipation (Max)
36W (Tc)
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