IPD50R520CP Infineon Technologies
Артикул
IPD50R520CP
Бренд
Infineon Technologies
Описание
MOSFET N-CH 550V 7.1A TO252-3, N-Channel 550 V 7.1A (Tc) 66W (Tc) Surface Mount PG-TO252-3-11
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD50R520CP.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
66W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
550 V
Current - Continuous Drain (Id) @ 25°C
7.1A (Tc)
Rds On (Max) @ Id, Vgs
520mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
SP000236063
Mounting Type
Surface Mount
Series
CoolMOS™
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3-11
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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