IPN80R2K4P7ATMA1 Infineon Technologies
Артикул
IPN80R2K4P7ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 800V 2.5A SOT223, N-Channel 800 V 2.5A (Tc) 6.3W (Tc) Surface Mount PG-SOT223
Цена
174 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPN80R2K4P7ATMA1.jpg
Other Names
INFINFIPN80R2K4P7ATMA1,IPN80R2K4P7ATMA1-ND,IPN80R600P7,IPN80R2K4P7ATMA1CT,2156-IPN80R2K4P7ATMA1,SP001664994,IPN80R2K4P7ATMA1DKR,IPN80R2K4P7ATMA1TR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
6.3W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Rds On (Max) @ Id, Vgs
2.4Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 500 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPN80R2
Mounting Type
Surface Mount
Series
CoolMOS™ P7
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Vgs (Max)
±20V
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