IPP80R360P7XKSA1 Infineon Technologies
Артикул
IPP80R360P7XKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 800V 13A TO220-3, N-Channel 800 V 13A (Tc) 84W (Tc) Through Hole PG-TO220-3
Цена
541 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP80R360P7XKSA1.jpg
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
930 pF @ 500 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™ P7
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFIPP80R360P7XKSA1,SP001633518,2156-IPP80R360P7XKSA1
Standard Package
50
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IPP80R360
Power Dissipation (Max)
84W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут