IRF6648TR1 Infineon Technologies
Артикул
IRF6648TR1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 60V 86A DIRECTFET MN, N-Channel 60 V 86A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6648TR1.jpg
Supplier Device Package
DIRECTFET™ MN
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2120 pF @ 25 V
FET Feature
-
Package / Case
DirectFET™ Isometric MN
Technology
MOSFET (Metal Oxide)
RoHS Status
RoHS non-compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
86A (Tc)
Moisture Sensitivity Level (MSL)
2 (1 Year)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF6648TR,IRF6648TR1-ND,SP001571492,IRF6648TR1INACTIVE,IRF6648,IRF6648CT,IRF6648-ND
Standard Package
1,000
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
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