IRF7473PBF Infineon Technologies
Артикул
IRF7473PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 6.9A 8SO, N-Channel 100 V 6.9A (Ta) 2.5W (Ta) Surface Mount 8-SO
Цена
277 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7473PBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.9A (Ta)
Rds On (Max) @ Id, Vgs
26mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3180 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
SP001572110
Mounting Type
Surface Mount
Standard Package
3,800
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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