IRFH3707TRPBF Infineon Technologies
Артикул
IRFH3707TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 12A/29A 8PQFN, N-Channel 30 V 12A (Ta), 29A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3)
Цена
90 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFH3707TRPBF.jpg
Other Names
SP001551876,IRFH3707TRPBFCT,IRFH3707TRPBF-ND,IRFH3707TRPBFDKR,IRFH3707TRPBFTR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.8W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs
12.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
755 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IRFH3707
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerVDFN
Supplier Device Package
8-PQFN (3x3)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,000
Vgs (Max)
±20V
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