IRFH7185TRPBF Infineon Technologies
Артикул
IRFH7185TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N CH 100V 19A 8QFN, N-Channel 100 V 19A (Ta) 3.6W (Ta), 160W (Tc) Surface Mount 8-PQFN (5x6)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFH7185TRPBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.6W (Ta), 160W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta)
Rds On (Max) @ Id, Vgs
5.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.6V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2320 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
IRFH7185TRPBFDKR,IRFH7185TRPBFCT,SP001566602,IRFH7185TRPBFTR
Base Product Number
IRFH7185
Mounting Type
Surface Mount
Series
FASTIRFET™, HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
8-PQFN (5x6)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,000
Vgs (Max)
±20V
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