IRLR6225PBF Infineon Technologies
Артикул
IRLR6225PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 20V 100A DPAK, N-Channel 20 V 100A (Tc) 63W (Tc) Surface Mount DPAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLR6225PBF.jpg
Supplier Device Package
DPAK
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
4mOhm @ 21A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
3770 pF @ 10 V
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001578814
Standard Package
3,000
Mounting Type
Surface Mount
Operating Temperature
-50°C ~ 150°C (TJ)
Power Dissipation (Max)
63W (Tc)
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